硅在水溶液中的反应机理(2)

的反应速度，表征了一个化学反应的快慢程度，而且κ的大小取决于温度及反应物本性，与浓度无关。

因此，单晶硅中各晶面的腐蚀速率与温度之间的量化关系有：

R?e-Ea/KT

这与右图基本吻合结果基本吻合

参考文献

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[2] I. Zubel, K. Rola, M. Kramkowska, The effect of isopropyl alcohol

concentration on the etching process of Si-substrates in KOH solutions. Sens. Actuators

A. 171 (2011) 436–445.

[3] T. Baum, D. Schiffrin, Kinetic isotopic effects in the anisotropic etching of p-Si〈100〉 in alkaline solutions, Journal of Electroanalytical Chemistry. 436 (1997) 239-244.

[4] M.Shikida,K.Sato , Comparison of anisotropic etching properties between KOH and TMAH solutions， Sensors and Actuators A，115：315-320（1999）

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