Maximum Ratings @TA = 25°C unless otherwise specified
Drain-Source Voltage VDSS
V Gate-Source Voltage ±12 VGSS
Drain Current (Note 4) Continuous TA = 25°C -4.6
A ID
-3.7 TA = 70°C
Pulsed Drain Current (Note 5) IDM
Body-Diode Continuous Current (Note 4) IS
Thermal Characteristics
Total Power Dissipation (Note 4) PD
Thermal Resistance, Junction to Ambient (Note 4); Steady-State 100 °C/W RJA Operating and Storage Temperature Range -55 to +150 °C TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
STATIC PARAMETERS
Drain-Source Breakdown Voltage -20 V BVDSS ID = -250μA, VGS = 0V
-1 μA Zero Gate Voltage Drain Current TJ = 25°C IDSS VDS = -20V, VGS = 0V
nA Gate-Body Leakage Current ±100 VDS = 0V, VGS = ±12V IGSS
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250μA On State Drain Current (Note 6) -15 A ID (ON) VGS = -4.5V, VDS = -5V
VGS = -4.5V, ID = -4.6A 29 40
Static Drain-Source On-Resistance (Note 6) mΩ RDS (ON)
55 70 VGS = -2.5V, ID = -3.8A 9 S Forward Transconductance (Note 6) VDS = -10V, ID = -4.6A gFS
Diode Forward Voltage (Note 6) IS = -2.1A, VGS = 0V VSD
Maximum Body-Diode Continuous Current (Note 4) IS
DYNAMIC PARAMETERS (Note 7)
820 pF Input Capacitance Ciss
VDS = -15V, VGS = 0V
200 pF Output Capacitance Coss
f = 1.0MHz
160 pF Reverse Transfer Capacitance Crss
VDS = 0V, VGS = 0V
Gate Resistance 2.5 RG Ω
f = 1.0MHz
SWITCHING CHARACTERISTICS
10.1 Total Gate Charge QG
VDS = -10V, VGS = -4.5V,
1.5 nC Gate-Source Charge QGS
ID = -4.5A
4.3 Gate-Drain Charge QGD
4.4 Turn-On Delay Time td(on)
9.9 Rise Time tr VDS = -10V, VGS = -4.5V,
ns
28.0 ID = -1A, RG = 6.0Ω Turn-Off Delay Time td(off)
23.4 Fall Time tf
Notes:
4. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s. 5. Repetitive Rating, pulse width limited by junction temperature. 6. Test pulse width t = 300μs.
7. Guaranteed by design. Not subject to production testing.
DMP2066LDM
Document number: DS31464 Rev. 4 - 2
2 of 5
http://www.77cn.com.cn
December 2011
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